This text appears to be a scientific article discussing the development and analysis of a new type of computer memory called Resistive Random Access Memory (RRAM) implemented in a photo-detector (PD). The article focuses on two aspects:

1. Performance: The authors analyze the performance of this RRAM technology used as part of an integrated circuit, specifically its behavior under various operating conditions such as different load currents and threshold voltage settings.
2. Robustness: To mitigate common issues that could affect data integrity or accuracy when using these resistive switches, improvements have been aimed at ensuring proper functioning under the influence of external factors that might degrade performance.

Here's an overview of parts 1 and 2:

Step 1

The Performance Analysis part focuses on various aspects of operation to see how effectively this technology measures voltage changes in response to signal inputs. Tests are performed including different measurement currents, various resistances levels (i.e., between high and low resistance states), and even external current noise testing.

Step 2

Robustness Enhancement addresses common sources of failure such as high error rates stemming from certain types of errors being "overwritten" when another is introduced during operation. The approach includes using different switch layer configurations, adjusting the materials to reduce errors (specifically by choosing a suitable dielectric material), and reducing variability among individual pixel units.

Step 3

An improvement in these areas shows significant improvements over baseline figures with minimal changes needed for implementation across all applications that might use this technology.