India's SSPL Achieves Breakthrough in GaN/SiC Technology, Powers Next-Generation Defense and Energy Systems
New Delhi: The Solid State Physics Laboratory (SSPL), under the Defence Research and Development Organisation (DRDO), has made history by developing indigenous methods for producing 4-inch Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150W. This groundbreaking achievement marks a significant milestone in semiconductor technology, paving the way for advanced power systems that will transform next-generation defense, aerospace, and sustainable energy solutions.
According to a statement from the Ministry of Defence, these breakthrough advancements also include Monolithic Microwave Integrated Circuits (MMICs) with power capabilities up to 40W, suitable for applications extending to X-band frequencies.India's SSPL has achieved a notable success in integrating GaN/SiC technology, paving the way forward for modern combat systems, radar technologies, electronic warfare, and green energy initiatives.
The gauging advantages of this new GaN/SiC technology include increased energy efficiency, reduced device size and weight, and enhanced performance. These characteristics are crucial for emerging military applications, where compact and lightweight power systems will be required to enhance communication, intelligence, reconnaissance, and autonomous capabilities. More broadly, this innovative technology has broader applicabilities that may help India's green energy goals.
The development of indigenous GaN on SiC-based MMIC production has been successfully implemented at the GAETEC (Gallium Arsenide Enabling Technology Centre) in Hyderabad. The establishment of these multifunctional MMICs, which support a variety of uses in next-generation strategic systems, space exploration, aerospace, and 5G satellite communications, will position India as a technology leader.
This achievement is a testament to the innovative spirit of Indian scientists at DRDO's SSPL, whose commitment to R&D has led fruitful developments.