INDIA TAKES A MAJOR LEAP IN SOLID STATE PHYSICS WITH GaN/SiC TECHNOLOGY BREAKTHROUGH

Bangalore, India - The Solid State Physics Laboratory (SSPL) under India's Defence Research and Development Organisation (DRDO) has recently achieved a groundbreaking milestone in semiconductor technology. The laboratory has successfully developed indigenous methods for producing 4-inch Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power capabilities of up to 150W.

According to a statement from the Ministry of Defence, this advancement also includes the development of Monolithic Microwave Integrated Circuits (MMICs) with power capabilities of up to 40W, making them suitable for applications extending to X-band frequencies. This breakthrough GaN/SiC technology is seen as a vital component for next-generation defense, aerospace, and sustainable energy solutions.

A spokesperson from SSPL stated that the GaN/SiC technology brings numerous advantages, including increased energy efficiency, reduced device size and weight, and enhanced performance. These characteristics are essential for modern combat systems, radar technologies, electronic warfare, and green energy initiatives, making this development a significant leap forward in critical areas of defense and clean energy.

The laboratory's collaboration with the Gallium Arsenide Enabling Technology Centre (GAETEC) in Hyderabad has successfully implemented indigenous GaN on SiC-based MMIC production. These multifunctional MMICs will support various applications in next-generation strategic systems, space exploration, aerospace, and 5G/satellite communications.

This significant achievement establishes India as a major player in the field of semiconductor technology development, paving the way for expansion into future military applications, electric vehicles, and renewable energy systems.